Abstract
Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, Pb0 and Pb1 defects, previously observed in Si/SiO2 structures. We show that the Si-db defect is located in the substrate only. We quantify the unpassivated P b-type defect density and show that this can be reduced by a pre-deposition nitridation step. However, forming gas annealing at temperatures up to 550 °C causes no further reduction in defect density; this may be related to the low deposition temperature, which causes a spread in passivation activation energies.
| Original language | English |
|---|---|
| Pages (from-to) | 74-77 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 80 |
| DOIs | |
| Publication status | Published - 17 Jun 2005 |
| Externally published | Yes |
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Analysis of defects at the interface between high-k thin films and (1 0 0) silicon. / Jones, B. J.; Barklie, R. C.
In: Microelectronic Engineering, Vol. 80, 17.06.2005, p. 74-77.Research output: Contribution to journal › Article
TY - JOUR
T1 - Analysis of defects at the interface between high-k thin films and (1 0 0) silicon
AU - Jones, B. J.
AU - Barklie, R. C.
PY - 2005/6/17
Y1 - 2005/6/17
N2 - Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, Pb0 and Pb1 defects, previously observed in Si/SiO2 structures. We show that the Si-db defect is located in the substrate only. We quantify the unpassivated P b-type defect density and show that this can be reduced by a pre-deposition nitridation step. However, forming gas annealing at temperatures up to 550 °C causes no further reduction in defect density; this may be related to the low deposition temperature, which causes a spread in passivation activation energies.
AB - Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, Pb0 and Pb1 defects, previously observed in Si/SiO2 structures. We show that the Si-db defect is located in the substrate only. We quantify the unpassivated P b-type defect density and show that this can be reduced by a pre-deposition nitridation step. However, forming gas annealing at temperatures up to 550 °C causes no further reduction in defect density; this may be related to the low deposition temperature, which causes a spread in passivation activation energies.
U2 - 10.1016/j.mee.2005.04.046
DO - 10.1016/j.mee.2005.04.046
M3 - Article
AN - SCOPUS:19944420155
VL - 80
SP - 74
EP - 77
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -