Analysis of defects at the interface between high-k thin films and (1 0 0) silicon

B. J. Jones*, R. C. Barklie

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, Pb0 and Pb1 defects, previously observed in Si/SiO2 structures. We show that the Si-db defect is located in the substrate only. We quantify the unpassivated P b-type defect density and show that this can be reduced by a pre-deposition nitridation step. However, forming gas annealing at temperatures up to 550 °C causes no further reduction in defect density; this may be related to the low deposition temperature, which causes a spread in passivation activation energies.

Original languageEnglish
Pages (from-to)74-77
Number of pages4
JournalMicroelectronic Engineering
Volume80
DOIs
Publication statusPublished - 17 Jun 2005
Externally publishedYes

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