Analysis of defects at the interface between high-k thin films and (1 0 0) silicon

B. J. Jones*, R. C. Barklie

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, Pb0 and Pb1 defects, previously observed in Si/SiO2 structures. We show that the Si-db defect is located in the substrate only. We quantify the unpassivated P b-type defect density and show that this can be reduced by a pre-deposition nitridation step. However, forming gas annealing at temperatures up to 550 °C causes no further reduction in defect density; this may be related to the low deposition temperature, which causes a spread in passivation activation energies.

Original languageEnglish
Pages (from-to)74-77
Number of pages4
JournalMicroelectronic Engineering
Volume80
DOIs
Publication statusPublished - 17 Jun 2005
Externally publishedYes

Fingerprint

Silicon
Defect density
Thin films
Defects
defects
silicon
thin films
Nitridation
Atomic layer deposition
Aluminum Oxide
Passivation
Oxide films
Paramagnetic resonance
Activation energy
Gases
Annealing
causes
Aluminum
Temperature
atomic layer epitaxy

Cite this

@article{d36d9c41446a4b07948a1a41567e0145,
title = "Analysis of defects at the interface between high-k thin films and (1 0 0) silicon",
abstract = "Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, Pb0 and Pb1 defects, previously observed in Si/SiO2 structures. We show that the Si-db defect is located in the substrate only. We quantify the unpassivated P b-type defect density and show that this can be reduced by a pre-deposition nitridation step. However, forming gas annealing at temperatures up to 550 °C causes no further reduction in defect density; this may be related to the low deposition temperature, which causes a spread in passivation activation energies.",
author = "Jones, {B. J.} and Barklie, {R. C.}",
year = "2005",
month = "6",
day = "17",
doi = "10.1016/j.mee.2005.04.046",
language = "English",
volume = "80",
pages = "74--77",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

Analysis of defects at the interface between high-k thin films and (1 0 0) silicon. / Jones, B. J.; Barklie, R. C.

In: Microelectronic Engineering, Vol. 80, 17.06.2005, p. 74-77.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Analysis of defects at the interface between high-k thin films and (1 0 0) silicon

AU - Jones, B. J.

AU - Barklie, R. C.

PY - 2005/6/17

Y1 - 2005/6/17

N2 - Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, Pb0 and Pb1 defects, previously observed in Si/SiO2 structures. We show that the Si-db defect is located in the substrate only. We quantify the unpassivated P b-type defect density and show that this can be reduced by a pre-deposition nitridation step. However, forming gas annealing at temperatures up to 550 °C causes no further reduction in defect density; this may be related to the low deposition temperature, which causes a spread in passivation activation energies.

AB - Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, Pb0 and Pb1 defects, previously observed in Si/SiO2 structures. We show that the Si-db defect is located in the substrate only. We quantify the unpassivated P b-type defect density and show that this can be reduced by a pre-deposition nitridation step. However, forming gas annealing at temperatures up to 550 °C causes no further reduction in defect density; this may be related to the low deposition temperature, which causes a spread in passivation activation energies.

U2 - 10.1016/j.mee.2005.04.046

DO - 10.1016/j.mee.2005.04.046

M3 - Article

VL - 80

SP - 74

EP - 77

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -