Abstract
Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, Pb0 and Pb1 defects, previously observed in Si/SiO2 structures. We show that the Si-db defect is located in the substrate only. We quantify the unpassivated P b-type defect density and show that this can be reduced by a pre-deposition nitridation step. However, forming gas annealing at temperatures up to 550 °C causes no further reduction in defect density; this may be related to the low deposition temperature, which causes a spread in passivation activation energies.
Original language | English |
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Pages (from-to) | 74-77 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 80 |
DOIs | |
Publication status | Published - 17 Jun 2005 |
Externally published | Yes |
Keywords
- Aluminium oxide
- Interfaces
- EPR
- Thin filims
- Defects
- High-k