Engineering & Materials Science
Defect density
74%
Thin films
73%
Silicon
61%
Defects
53%
Nitridation
40%
Atomic layer deposition
39%
Paramagnetic resonance
35%
Oxide films
32%
Passivation
31%
Activation energy
27%
Annealing
25%
Aluminum oxide
25%
Temperature
20%
Substrates
18%
Gases
14%
Chemistry
Aluminium Oxide
100%
Atomic Layer Epitaxy
90%
Chemical Passivation
79%
EPR Spectroscopy
68%
Annealing
61%
Reaction Activation Energy
54%
Gas
41%
Reduction
35%
Physics & Astronomy
defects
43%
silicon
42%
thin films
40%
causes
19%
atomic layer epitaxy
16%
passivity
14%
electron paramagnetic resonance
14%
aluminum oxides
12%
activation energy
11%
annealing
9%
temperature
9%
gases
8%