Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface

B. J. Jones; R. C. Barklie

doi:10.1088/0022-3727/38/8/013

Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface

B. J. Jones^*, R. C. Barklie

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Electron paramagnetic resonance was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only P _b0 and P_b1 centres, which are well known in Si/SiO ₂ structures. Al₂O₃ films deposited on HF-treated (100)Si exhibit unpassivated P_b0 and P_b1 centres, with concentrations of (7.7 ± 1.0) × 10¹¹ cm^-2 and (8 ±3) × 10¹⁰ cm^-2, respectively. Rapid thermal annealing of the substrate in NH₃ prior to film deposition reduces the unpassivated P_b0 concentration to (4.5 ± 0.7) × 10¹¹ cm^-2. Forming gas annealing at temperatures in the range 400-550°C causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low-temperature deposition.

Original language	English
Pages (from-to)	1178-1181
Number of pages	4
Journal	Journal of Physics D: Applied Physics
Volume	38
Issue number	8
DOIs	https://doi.org/10.1088/0022-3727/38/8/013
Publication status	Published - 21 Apr 2005
Externally published	Yes

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title = "Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface",

abstract = "Electron paramagnetic resonance was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only P b0 and Pb1 centres, which are well known in Si/SiO 2 structures. Al2O3 films deposited on HF-treated (100)Si exhibit unpassivated Pb0 and Pb1 centres, with concentrations of (7.7 ± 1.0) × 1011 cm-2 and (8 ±3) × 1010 cm-2, respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduces the unpassivated Pb0 concentration to (4.5 ± 0.7) × 1011 cm-2. Forming gas annealing at temperatures in the range 400-550°C causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low-temperature deposition.",

author = "Jones, {B. J.} and Barklie, {R. C.}",

year = "2005",

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T1 - Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface

AU - Jones, B. J.

AU - Barklie, R. C.

PY - 2005/4/21

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N2 - Electron paramagnetic resonance was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only P b0 and Pb1 centres, which are well known in Si/SiO 2 structures. Al2O3 films deposited on HF-treated (100)Si exhibit unpassivated Pb0 and Pb1 centres, with concentrations of (7.7 ± 1.0) × 1011 cm-2 and (8 ±3) × 1010 cm-2, respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduces the unpassivated Pb0 concentration to (4.5 ± 0.7) × 1011 cm-2. Forming gas annealing at temperatures in the range 400-550°C causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low-temperature deposition.

AB - Electron paramagnetic resonance was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only P b0 and Pb1 centres, which are well known in Si/SiO 2 structures. Al2O3 films deposited on HF-treated (100)Si exhibit unpassivated Pb0 and Pb1 centres, with concentrations of (7.7 ± 1.0) × 1011 cm-2 and (8 ±3) × 1010 cm-2, respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduces the unpassivated Pb0 concentration to (4.5 ± 0.7) × 1011 cm-2. Forming gas annealing at temperatures in the range 400-550°C causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low-temperature deposition.

U2 - 10.1088/0022-3727/38/8/013

DO - 10.1088/0022-3727/38/8/013

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JO - Journal Physics D: Applied Physics

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