Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface

B. J. Jones*, R. C. Barklie

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Electron paramagnetic resonance was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only P b0 and Pb1 centres, which are well known in Si/SiO 2 structures. Al2O3 films deposited on HF-treated (100)Si exhibit unpassivated Pb0 and Pb1 centres, with concentrations of (7.7 ± 1.0) × 1011 cm-2 and (8 ±3) × 1010 cm-2, respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduces the unpassivated Pb0 concentration to (4.5 ± 0.7) × 1011 cm-2. Forming gas annealing at temperatures in the range 400-550°C causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low-temperature deposition.

Original languageEnglish
Pages (from-to)1178-1181
Number of pages4
JournalJournal of Physics D: Applied Physics
Volume38
Issue number8
DOIs
Publication statusPublished - 21 Apr 2005
Externally publishedYes

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Paramagnetic resonance
electron paramagnetic resonance
Defects
annealing
Atomic layer deposition
Aluminum Oxide
evaluation
Rapid thermal annealing
Defect density
defects
atomic layer epitaxy
Passivation
passivity
Oxide films
oxide films
aluminum oxides
Activation energy
Gases
fine structure
Annealing

Cite this

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title = "Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface",
abstract = "Electron paramagnetic resonance was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only P b0 and Pb1 centres, which are well known in Si/SiO 2 structures. Al2O3 films deposited on HF-treated (100)Si exhibit unpassivated Pb0 and Pb1 centres, with concentrations of (7.7 ± 1.0) × 1011 cm-2 and (8 ±3) × 1010 cm-2, respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduces the unpassivated Pb0 concentration to (4.5 ± 0.7) × 1011 cm-2. Forming gas annealing at temperatures in the range 400-550°C causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low-temperature deposition.",
author = "Jones, {B. J.} and Barklie, {R. C.}",
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Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface. / Jones, B. J.; Barklie, R. C.

In: Journal of Physics D: Applied Physics, Vol. 38, No. 8, 21.04.2005, p. 1178-1181.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface

AU - Jones, B. J.

AU - Barklie, R. C.

PY - 2005/4/21

Y1 - 2005/4/21

N2 - Electron paramagnetic resonance was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only P b0 and Pb1 centres, which are well known in Si/SiO 2 structures. Al2O3 films deposited on HF-treated (100)Si exhibit unpassivated Pb0 and Pb1 centres, with concentrations of (7.7 ± 1.0) × 1011 cm-2 and (8 ±3) × 1010 cm-2, respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduces the unpassivated Pb0 concentration to (4.5 ± 0.7) × 1011 cm-2. Forming gas annealing at temperatures in the range 400-550°C causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low-temperature deposition.

AB - Electron paramagnetic resonance was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only P b0 and Pb1 centres, which are well known in Si/SiO 2 structures. Al2O3 films deposited on HF-treated (100)Si exhibit unpassivated Pb0 and Pb1 centres, with concentrations of (7.7 ± 1.0) × 1011 cm-2 and (8 ±3) × 1010 cm-2, respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduces the unpassivated Pb0 concentration to (4.5 ± 0.7) × 1011 cm-2. Forming gas annealing at temperatures in the range 400-550°C causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low-temperature deposition.

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