Abstract
Electron paramagnetic resonance was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only P b0 and Pb1 centres, which are well known in Si/SiO 2 structures. Al2O3 films deposited on HF-treated (100)Si exhibit unpassivated Pb0 and Pb1 centres, with concentrations of (7.7 ± 1.0) × 1011 cm-2 and (8 ±3) × 1010 cm-2, respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduces the unpassivated Pb0 concentration to (4.5 ± 0.7) × 1011 cm-2. Forming gas annealing at temperatures in the range 400-550°C causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low-temperature deposition.
| Original language | English |
|---|---|
| Pages (from-to) | 1178-1181 |
| Number of pages | 4 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 38 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 21 Apr 2005 |
| Externally published | Yes |
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Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface. / Jones, B. J.; Barklie, R. C.
In: Journal of Physics D: Applied Physics, Vol. 38, No. 8, 21.04.2005, p. 1178-1181.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface
AU - Jones, B. J.
AU - Barklie, R. C.
PY - 2005/4/21
Y1 - 2005/4/21
N2 - Electron paramagnetic resonance was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only P b0 and Pb1 centres, which are well known in Si/SiO 2 structures. Al2O3 films deposited on HF-treated (100)Si exhibit unpassivated Pb0 and Pb1 centres, with concentrations of (7.7 ± 1.0) × 1011 cm-2 and (8 ±3) × 1010 cm-2, respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduces the unpassivated Pb0 concentration to (4.5 ± 0.7) × 1011 cm-2. Forming gas annealing at temperatures in the range 400-550°C causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low-temperature deposition.
AB - Electron paramagnetic resonance was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only P b0 and Pb1 centres, which are well known in Si/SiO 2 structures. Al2O3 films deposited on HF-treated (100)Si exhibit unpassivated Pb0 and Pb1 centres, with concentrations of (7.7 ± 1.0) × 1011 cm-2 and (8 ±3) × 1010 cm-2, respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduces the unpassivated Pb0 concentration to (4.5 ± 0.7) × 1011 cm-2. Forming gas annealing at temperatures in the range 400-550°C causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low-temperature deposition.
U2 - 10.1088/0022-3727/38/8/013
DO - 10.1088/0022-3727/38/8/013
M3 - Article
AN - SCOPUS:24144471068
VL - 38
SP - 1178
EP - 1181
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 8
ER -