Electron paramagnetic resonance study of ion implantation induced defects in amorphous hydrogenated carbon

B. J. Jones*, R. C. Barklie, R. U A Khan, J. D. Carey, S. R P Silva

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Electron paramagnetic resonance (EPR) measurements have been made of defects in amorphous hydrogenated carbon (a-C:H) thin films. The films were grown on silicon substrates on the earthed electrode of an rf-powered plasma enhanced chemical vapour deposition reactor and were subsequently implanted with a range of doses of boron, carbon or nitrogen ions with energies from 20 keV to 32.5 keV. Two paramagnetic centres are observed, the carbon defect in the film with g = 2.0028(1) and a silicon defect in the substrate with g = 2.0058(6). The volume concentration of the carbon defect increases approximately linearly with dose, from approximately 3 × 1017 cm-3 for unimplanted samples to 2.7 × 1020 cm-3 at the highest implantation of 2 × 1016 B+ ions cm-2. The increase in dose over this range also causes a narrowing of the EPR line (from 0.83 mT to 0.13 mT) and a significant decrease in the spin-lattice relaxation time (from 3 × 10-5 s to 6 × 10-8 s) which approaches the spin-spin relaxation time at the highest dose. The narrowing is attributed to motional averaging produced by either exchange or hopping. We also report the effects of annealing samples implanted with a range of boron doses. The prime novelty of this paper is that it is the first EPR study of defects produced by the implantation of a range of ions into polymer-like amorphous hydrogenated carbon.

Original languageEnglish
Pages (from-to)993-997
Number of pages5
JournalDiamond and Related Materials
Volume10
Issue number3-7
DOIs
Publication statusPublished - Mar 2001
Externally publishedYes

Fingerprint

Ion implantation
Paramagnetic resonance
Carbon
Defects
Boron
Silicon
Ions
Relaxation time
Spin-lattice relaxation
Substrates
Plasma enhanced chemical vapor deposition
Polymers
Nitrogen
Annealing
Thin films
Electrodes

Cite this

Jones, B. J. ; Barklie, R. C. ; Khan, R. U A ; Carey, J. D. ; Silva, S. R P. / Electron paramagnetic resonance study of ion implantation induced defects in amorphous hydrogenated carbon. In: Diamond and Related Materials. 2001 ; Vol. 10, No. 3-7. pp. 993-997.
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abstract = "Electron paramagnetic resonance (EPR) measurements have been made of defects in amorphous hydrogenated carbon (a-C:H) thin films. The films were grown on silicon substrates on the earthed electrode of an rf-powered plasma enhanced chemical vapour deposition reactor and were subsequently implanted with a range of doses of boron, carbon or nitrogen ions with energies from 20 keV to 32.5 keV. Two paramagnetic centres are observed, the carbon defect in the film with g = 2.0028(1) and a silicon defect in the substrate with g = 2.0058(6). The volume concentration of the carbon defect increases approximately linearly with dose, from approximately 3 × 1017 cm-3 for unimplanted samples to 2.7 × 1020 cm-3 at the highest implantation of 2 × 1016 B+ ions cm-2. The increase in dose over this range also causes a narrowing of the EPR line (from 0.83 mT to 0.13 mT) and a significant decrease in the spin-lattice relaxation time (from 3 × 10-5 s to 6 × 10-8 s) which approaches the spin-spin relaxation time at the highest dose. The narrowing is attributed to motional averaging produced by either exchange or hopping. We also report the effects of annealing samples implanted with a range of boron doses. The prime novelty of this paper is that it is the first EPR study of defects produced by the implantation of a range of ions into polymer-like amorphous hydrogenated carbon.",
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Electron paramagnetic resonance study of ion implantation induced defects in amorphous hydrogenated carbon. / Jones, B. J.; Barklie, R. C.; Khan, R. U A; Carey, J. D.; Silva, S. R P.

In: Diamond and Related Materials, Vol. 10, No. 3-7, 03.2001, p. 993-997.

Research output: Contribution to journalArticle

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AU - Jones, B. J.

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N2 - Electron paramagnetic resonance (EPR) measurements have been made of defects in amorphous hydrogenated carbon (a-C:H) thin films. The films were grown on silicon substrates on the earthed electrode of an rf-powered plasma enhanced chemical vapour deposition reactor and were subsequently implanted with a range of doses of boron, carbon or nitrogen ions with energies from 20 keV to 32.5 keV. Two paramagnetic centres are observed, the carbon defect in the film with g = 2.0028(1) and a silicon defect in the substrate with g = 2.0058(6). The volume concentration of the carbon defect increases approximately linearly with dose, from approximately 3 × 1017 cm-3 for unimplanted samples to 2.7 × 1020 cm-3 at the highest implantation of 2 × 1016 B+ ions cm-2. The increase in dose over this range also causes a narrowing of the EPR line (from 0.83 mT to 0.13 mT) and a significant decrease in the spin-lattice relaxation time (from 3 × 10-5 s to 6 × 10-8 s) which approaches the spin-spin relaxation time at the highest dose. The narrowing is attributed to motional averaging produced by either exchange or hopping. We also report the effects of annealing samples implanted with a range of boron doses. The prime novelty of this paper is that it is the first EPR study of defects produced by the implantation of a range of ions into polymer-like amorphous hydrogenated carbon.

AB - Electron paramagnetic resonance (EPR) measurements have been made of defects in amorphous hydrogenated carbon (a-C:H) thin films. The films were grown on silicon substrates on the earthed electrode of an rf-powered plasma enhanced chemical vapour deposition reactor and were subsequently implanted with a range of doses of boron, carbon or nitrogen ions with energies from 20 keV to 32.5 keV. Two paramagnetic centres are observed, the carbon defect in the film with g = 2.0028(1) and a silicon defect in the substrate with g = 2.0058(6). The volume concentration of the carbon defect increases approximately linearly with dose, from approximately 3 × 1017 cm-3 for unimplanted samples to 2.7 × 1020 cm-3 at the highest implantation of 2 × 1016 B+ ions cm-2. The increase in dose over this range also causes a narrowing of the EPR line (from 0.83 mT to 0.13 mT) and a significant decrease in the spin-lattice relaxation time (from 3 × 10-5 s to 6 × 10-8 s) which approaches the spin-spin relaxation time at the highest dose. The narrowing is attributed to motional averaging produced by either exchange or hopping. We also report the effects of annealing samples implanted with a range of boron doses. The prime novelty of this paper is that it is the first EPR study of defects produced by the implantation of a range of ions into polymer-like amorphous hydrogenated carbon.

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