Manganese oxide material for electrochemical cells

Peter George Bruce (Inventor), Alastair Douglas Robertson (Inventor)

Research output: Patent

Abstract

There is provided a manganese oxide material, wherein the material comprises a host material Q.sub.qMn.sub.yM.sub.zO.sub.x, where Q and M are each any element, y is any number greater than zero, and q and z are each any number greater than or equal to zero, and at least one dopant substituted into the host material, the manganese oxide material having a layered structure in which the ions are arranged in a series of generally planar layers, or sheets, stacked one on top of another. In a particularly preferred material Q is Li and M is either Co, Ni, Al, or Li. Particularly preferred combinations of M and a dopant are Ni,Co; Al,Co; Li,Cu; Li,Al; and Li,Zn. A method of preparing the material is also disclosed.
Original languageEnglish
Patent number7686984
IPCHOB I/02
Priority date14/07/01
Publication statusPublished - 30 Mar 2010
Externally publishedYes

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manganese oxides
electrochemical cells
ions

Cite this

Bruce, P. G., & Robertson, A. D. (2010). IPC No. HOB I/02 . Manganese oxide material for electrochemical cells. (Patent No. 7686984 ).
Bruce, Peter George (Inventor) ; Robertson, Alastair Douglas (Inventor). / Manganese oxide material for electrochemical cells. IPC No.: HOB I/02 . Patent No.: 7686984 .
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Bruce, PG & Robertson, AD 2010, Manganese oxide material for electrochemical cells, Patent No. 7686984 , IPC No. HOB I/02 .

Manganese oxide material for electrochemical cells. / Bruce, Peter George (Inventor); Robertson, Alastair Douglas (Inventor).

IPC No.: HOB I/02 . Patent No.: 7686984 .

Research output: Patent

TY - PAT

T1 - Manganese oxide material for electrochemical cells

AU - Bruce, Peter George

AU - Robertson, Alastair Douglas

PY - 2010/3/30

Y1 - 2010/3/30

N2 - There is provided a manganese oxide material, wherein the material comprises a host material Q.sub.qMn.sub.yM.sub.zO.sub.x, where Q and M are each any element, y is any number greater than zero, and q and z are each any number greater than or equal to zero, and at least one dopant substituted into the host material, the manganese oxide material having a layered structure in which the ions are arranged in a series of generally planar layers, or sheets, stacked one on top of another. In a particularly preferred material Q is Li and M is either Co, Ni, Al, or Li. Particularly preferred combinations of M and a dopant are Ni,Co; Al,Co; Li,Cu; Li,Al; and Li,Zn. A method of preparing the material is also disclosed.

AB - There is provided a manganese oxide material, wherein the material comprises a host material Q.sub.qMn.sub.yM.sub.zO.sub.x, where Q and M are each any element, y is any number greater than zero, and q and z are each any number greater than or equal to zero, and at least one dopant substituted into the host material, the manganese oxide material having a layered structure in which the ions are arranged in a series of generally planar layers, or sheets, stacked one on top of another. In a particularly preferred material Q is Li and M is either Co, Ni, Al, or Li. Particularly preferred combinations of M and a dopant are Ni,Co; Al,Co; Li,Cu; Li,Al; and Li,Zn. A method of preparing the material is also disclosed.

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Bruce PG, Robertson AD, inventors. Manganese oxide material for electrochemical cells. HOB I/02 . 2010 Mar 30.