Oxalic acid sensors based on sol-gel nanostructured TiO2 films

M. Morozova; P. Kluson; J. Krysa; Ch Gwenin; O. Solcova

doi:10.1007/s10971-010-2374-7

Oxalic acid sensors based on sol-gel nanostructured TiO₂ films

M. Morozova^*, P. Kluson, J. Krysa, Ch Gwenin, O. Solcova

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Titanium (IV) oxide semiconducting layers were prepared by means of the templated sol-gel method and deposited on conductive ITO substrates. The films were described by a series of techniques involving X-ray diffraction (XRD), Raman spectroscopy, X-ray reflectivity (XRR), atomic force microscopy (AFM), scanning electron microscopy (SEM) and ultraviolet-visible spectroscopy (UV-Vis). The photo-excitation properties of the films were characterized by electrochemical tests and evaluated from the obtained polarization curves. The generated photocurrents were measured in the presence of the hole-scavengers-oxalic acid and formic acid in the electrolyte. It was shown that especially in the case of oxalic acid the developed system can be used as an efficient and simpler concentration sensor. The relationship between values of the generated photocurrent and the layers' thicknesses was also investigated.

Original language	English
Pages (from-to)	175-181
Number of pages	7
Journal	Journal of Sol-Gel Science and Technology
Volume	58
Issue number	1
Early online date	7 Dec 2010
DOIs	https://doi.org/10.1007/s10971-010-2374-7
Publication status	Published - 1 Apr 2011
Externally published	Yes

Keywords

Titanium oxide
Photo-electrochemical oxidation
Oxalic acid
Formic acid
Sol–Gel

Access to Document

10.1007/s10971-010-2374-7

Cite this

@article{3ea86228596b4bafa89de17ed5515498,

title = "Oxalic acid sensors based on sol-gel nanostructured TiO2 films",

abstract = "Titanium (IV) oxide semiconducting layers were prepared by means of the templated sol-gel method and deposited on conductive ITO substrates. The films were described by a series of techniques involving X-ray diffraction (XRD), Raman spectroscopy, X-ray reflectivity (XRR), atomic force microscopy (AFM), scanning electron microscopy (SEM) and ultraviolet-visible spectroscopy (UV-Vis). The photo-excitation properties of the films were characterized by electrochemical tests and evaluated from the obtained polarization curves. The generated photocurrents were measured in the presence of the hole-scavengers-oxalic acid and formic acid in the electrolyte. It was shown that especially in the case of oxalic acid the developed system can be used as an efficient and simpler concentration sensor. The relationship between values of the generated photocurrent and the layers' thicknesses was also investigated.",

author = "M. Morozova and P. Kluson and J. Krysa and Ch Gwenin and O. Solcova",

note = "Funding Information: This work was financially supported by Academy of Sciences of the Czech Republic. The authors also gratefully acknowledge the Grant Agency of the Czech Republic, project No. GD 203/08/H032 and GA 104/09/0694, and Academy of Sciences of the Czech Republic—project No. KAN400720701. The authors thank Mgr. Z. Mat{\v e}j, Charles University in Prague, for XRD and XRR measurements.",

year = "2011",

month = apr,

day = "1",

doi = "10.1007/s10971-010-2374-7",

language = "English",

volume = "58",

pages = "175--181",

journal = "Journal of Sol-Gel Science and Technology",

issn = "0928-0707",

publisher = "Springer Netherlands",

number = "1",

}

TY - JOUR

T1 - Oxalic acid sensors based on sol-gel nanostructured TiO2 films

AU - Morozova, M.

AU - Kluson, P.

AU - Krysa, J.

AU - Gwenin, Ch

AU - Solcova, O.

N1 - Funding Information: This work was financially supported by Academy of Sciences of the Czech Republic. The authors also gratefully acknowledge the Grant Agency of the Czech Republic, project No. GD 203/08/H032 and GA 104/09/0694, and Academy of Sciences of the Czech Republic—project No. KAN400720701. The authors thank Mgr. Z. Matěj, Charles University in Prague, for XRD and XRR measurements.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - Titanium (IV) oxide semiconducting layers were prepared by means of the templated sol-gel method and deposited on conductive ITO substrates. The films were described by a series of techniques involving X-ray diffraction (XRD), Raman spectroscopy, X-ray reflectivity (XRR), atomic force microscopy (AFM), scanning electron microscopy (SEM) and ultraviolet-visible spectroscopy (UV-Vis). The photo-excitation properties of the films were characterized by electrochemical tests and evaluated from the obtained polarization curves. The generated photocurrents were measured in the presence of the hole-scavengers-oxalic acid and formic acid in the electrolyte. It was shown that especially in the case of oxalic acid the developed system can be used as an efficient and simpler concentration sensor. The relationship between values of the generated photocurrent and the layers' thicknesses was also investigated.

AB - Titanium (IV) oxide semiconducting layers were prepared by means of the templated sol-gel method and deposited on conductive ITO substrates. The films were described by a series of techniques involving X-ray diffraction (XRD), Raman spectroscopy, X-ray reflectivity (XRR), atomic force microscopy (AFM), scanning electron microscopy (SEM) and ultraviolet-visible spectroscopy (UV-Vis). The photo-excitation properties of the films were characterized by electrochemical tests and evaluated from the obtained polarization curves. The generated photocurrents were measured in the presence of the hole-scavengers-oxalic acid and formic acid in the electrolyte. It was shown that especially in the case of oxalic acid the developed system can be used as an efficient and simpler concentration sensor. The relationship between values of the generated photocurrent and the layers' thicknesses was also investigated.

U2 - 10.1007/s10971-010-2374-7

DO - 10.1007/s10971-010-2374-7

M3 - Article

AN - SCOPUS:79954604416

SN - 0928-0707

VL - 58

SP - 175

EP - 181

JO - Journal of Sol-Gel Science and Technology

JF - Journal of Sol-Gel Science and Technology

IS - 1